Evaluation of e-beam SiO2 for MIM application
A metal-insulator-metal (MIM) device is used to rectify high frequency radiation received through an antenna coupled to it. In this study, a Ta-SiO2-Ta MIM device was fabricated and characterized. SiO2 layers with different thicknesses of 2nm, 5nm and 8nm were deposited and evaluated both electrical...
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| Format: | Others |
| Language: | en_US |
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2010
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| Online Access: | http://hdl.handle.net/10048/1098 |