Fabrication and characterisation of ridge waveguide InGaAs quantum well lasers
We have fabricated separate confinement heterostructure, graded index, indium gallium arsenide (InGaAs), strained layer, quantum well, ridge waveguide lasers. This thesis describes both the fabrication procedure we have used and the results of our characterisation of these devices. Our fabrication...
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| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/2429/4306 |