Deep-level transient spectroscopy, DLTS, for the determination of trap parameters in semiconductor devices
The design principle and the data acquisition processing of a full-curve computerized deep-level transient spectroscopy (DLTS) system are described in detail. This system is more reliable, flexible and accurate than the conventional methods in the determination of deep level traps in semiconductor d...
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| Format: | Others |
| Language: | en en_US |
| Published: |
2007
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| Online Access: | http://hdl.handle.net/1993/1310 |