Development of Al2O3 Gate Dielectrics for Organic Thin-film Transistors
The focus of this thesis is on radio frequency magnetron sputtered aluminum oxide thin films developed for use as the gate dielectric for organic thin film transistors. The effect of top metal electrodes on the electrical characteristics of aluminum oxide metal-insulator-metal capacitors has been...
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| Format: | Others |
| Language: | en_ca |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/1807/11174 |