Predicting Phonon Transport in Semiconductor Nanostructures using Atomistic Calculations and the Boltzmann Transport Equation

The mechanisms of thermal transport in defect-free silicon nanostructures are examined using a combination of lattice dynamics (LD) calculations and the Boltzmann transport equation (BTE). To begin, the thermal conductivity reduction in thin films is examined using a hierarchical method that first...

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Bibliographic Details
Main Author: Sellan, Daniel P.
Other Authors: Amon, Cristina
Language:en_ca
Published: 2012
Subjects:
Online Access:http://hdl.handle.net/1807/32882