Predicting Phonon Transport in Semiconductor Nanostructures using Atomistic Calculations and the Boltzmann Transport Equation
The mechanisms of thermal transport in defect-free silicon nanostructures are examined using a combination of lattice dynamics (LD) calculations and the Boltzmann transport equation (BTE). To begin, the thermal conductivity reduction in thin films is examined using a hierarchical method that first...
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Language: | en_ca |
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2012
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Online Access: | http://hdl.handle.net/1807/32882 |