Numerical Modeling of Self-heating in MOSFET and FinFET Basic Logic Gates Using Effective Thermal Conductivity

Recent trend of minimization in microprocessors has introduced increasing self-heating effects in FinFET and MOSFET transistors. To study these self-heating effects, we developed self-consistent 3D models of FinFET and MOSFET basic logic gates, and simulated steady-state thermal transport for the wo...

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Bibliographic Details
Main Author: Pak Seresht, Elham
Other Authors: Amon, Cristina
Language:en_ca
Published: 2012
Subjects:
Online Access:http://hdl.handle.net/1807/33496