Characterization of insulator layers in magnetic tunneling junctions with applications in memory devices
Magnetic tunnel junctions ( MTJ s) are electrical devices that display a large change in resistance when an external magnetic field applied to the junctions. MTJ s have applications in non-volatile memory element in Magnetic Random Access Memory (MRAM). MTJ is composed of two ferromagnetic metallic...
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2007
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| Online Access: | http://spectrum.library.concordia.ca/975315/1/MR34719.pdf Ren, Ciwei <http://spectrum.library.concordia.ca/view/creators/Ren=3ACiwei=3A=3A.html> (2007) Characterization of insulator layers in magnetic tunneling junctions with applications in memory devices. Masters thesis, Concordia University. |
Internet
http://spectrum.library.concordia.ca/975315/1/MR34719.pdfRen, Ciwei <http://spectrum.library.concordia.ca/view/creators/Ren=3ACiwei=3A=3A.html> (2007) Characterization of insulator layers in magnetic tunneling junctions with applications in memory devices. Masters thesis, Concordia University.