Molecular beam epitaxial growth, characterization and device applications of III-Nitride nanowire heterostructures
Recently, group III-nitride nanowire heterostructures have been extensively investigated. Due to the effective lateral stress relaxation, such nanoscale heterostructures can be epitaxially grown on silicon or other foreign substrates and can exhibit drastically reduced dislocations and polarization...
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| Format: | Others |
| Language: | en |
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McGill University
2012
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| Online Access: | http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=107905 |