Fabrication and characterization of gallium nitride high electron mobility transistors
Compound semiconductor gallium nitride high electron mobility transistors (HEMTs) have significant potential for use in the electronics industry, including radar applications and microwave transmitters for communications. These wide band gap semiconductors have unique material properties that lead t...
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| Format: | Others |
| Language: | en |
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McGill University
2013
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| Online Access: | http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=119603 |