Electrical transport properties of n-Type InP
InP obtained by metal-organic vapor phase epitaxy, with properties similar to GaAs, shows mobilities approaching the theoretical maxima at low temperatures. However, the corresponding values remain abnormally low at room temperature where a pronounced electronic excitation to the conduction band is...
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| Format: | Others |
| Language: | en |
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McGill University
1988
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| Online Access: | http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=61237 |