Cross-sectional imaging of semiconductor devices using nanometer scale point contacts
In order to study semiconductor dopant profiles a novel technique based on localized contact resistance measurements has been designed and implemented. Scanning Resistance Microscopy (SRM) is a nanometer scale technique for performing two-dimensional pn junction delineation and carrier profiling on...
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| Language: | en_US |
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2007
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| Online Access: | http://hdl.handle.net/1993/1440 |