A study of charges and defects in SiO2 films fabricated by plasma-enhanced chemical vapour deposition (PECVD) techniques
Main Author: | |
---|---|
Published: |
2013
|
Online Access: | http://hdl.handle.net/1993/17053 |
Main Author: | |
---|---|
Published: |
2013
|
Online Access: | http://hdl.handle.net/1993/17053 |