Modeling gallium-nitride based high electron Mobility transistors : linking device physics to high voltage and high frequency circuit design
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016. === This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. === Cataloged from student-su...
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Language: | English |
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Massachusetts Institute of Technology
2016
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Online Access: | http://hdl.handle.net/1721.1/105951 |