Bias temperature instability (BTI) in GaN MOSFETs

Bias temperature instability (BTI) in GaN MOSFETs

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016. === Cataloged from PDF version of thesis. === Includes bibliographical references (pages 109-116). === GaN is a promising alternative to Si for transistors for power electronics. F...

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Bibliographic Details
Main Author: Guo, Alex
Other Authors: Jesús A. del Alamo.
Format: Others
Language:English
Published: Massachusetts Institute of Technology 2017
Subjects:
Electrical Engineering and Computer Science.
Online Access:http://hdl.handle.net/1721.1/107335

Internet

http://hdl.handle.net/1721.1/107335

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