Bias temperature instability (BTI) in GaN MOSFETs
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016. === Cataloged from PDF version of thesis. === Includes bibliographical references (pages 109-116). === GaN is a promising alternative to Si for transistors for power electronics. F...
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Format: | Others |
Language: | English |
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Massachusetts Institute of Technology
2017
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Online Access: | http://hdl.handle.net/1721.1/107335 |