Dielectric reliability in high-voltage GaN metal-insulator-semiconductor high electron mobility transistors
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017. === Cataloged from PDF version of thesis. === Includes bibliographical references. === As the demand for more energy-efficient electronics increases, GaN has emerged as a promising...
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| Format: | Others |
| Language: | English |
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Massachusetts Institute of Technology
2017
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| Online Access: | http://hdl.handle.net/1721.1/112032 |