Dielectric reliability in high-voltage GaN metal-insulator-semiconductor high electron mobility transistors
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017. === Cataloged from PDF version of thesis. === Includes bibliographical references. === As the demand for more energy-efficient electronics increases, GaN has emerged as a promising...
Main Author: | Warnock, Shireen M |
---|---|
Other Authors: | Jesús A. del Alamo. |
Format: | Others |
Language: | English |
Published: |
Massachusetts Institute of Technology
2017
|
Subjects: | |
Online Access: | http://hdl.handle.net/1721.1/112032 |
Similar Items
-
Dielectric reliability in GaN metal-insulator-semiconductor high electron mobility transistors
by: Lee, Ethan S
Published: (2019) -
Gate Dielectric Optimization of High Performance GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors.
by: Yang, Shang-Chieh, et al.
Published: (2017) -
Time dependent dielectric breakdown in novel GaN metal-insulator-semiconductor high electron mobility transistors
by: Lednev, Alexander I.(Alexander Igorevich)
Published: (2019) -
Fabrication and Characterization of High Voltage AlGaN/GaN Metal-Insulator-Semiconductor Field Effect Transistors
by: Tsung-Cheng Chang, et al.
Published: (2017) -
Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate
by: Demirtas, Sefa, et al.
Published: (2010)