Modeling of electron transport in sub-100 nm channel length silicon MOSFETs

Modeling of electron transport in sub-100 nm channel length silicon MOSFETs

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995. === Includes bibliographical references (p. 216). === by Jarvis B. Jacobs. === Ph.D.

Bibliographic Details
Main Author: Jacobs, Jarvis Benjamin
Other Authors: Dimitri Antoniadis
Format: Others
Language:English
Published: Massachusetts Institute of Technology 2005
Subjects:
Electrical Engineering and Computer Science
Online Access:http://hdl.handle.net/1721.1/11414

Internet

http://hdl.handle.net/1721.1/11414

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