Effect of varying gate-drain distance on the RF power performance of pseudomorphic high electron mobility transistors

Effect of varying gate-drain distance on the RF power performance of pseudomorphic high electron mobility transistors

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005. === Includes bibliographical references (p. 134-137). === AIGaAs/lnGaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs) are widely used in satellite communications, military an...

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Bibliographic Details
Main Author: Wong, Melinda F
Other Authors: Jesús A. del Alamo.
Format: Others
Language:English
Published: Massachusetts Institute of Technology 2006
Subjects:
Electrical Engineering and Computer Science.
Online Access:http://hdl.handle.net/1721.1/34638

Internet

http://hdl.handle.net/1721.1/34638

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