Degradation mechanisms of GaN high electron mobility transistors
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007. === Includes bibliographical references (p. 83-85). === In spite of their extraordinary performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF p...
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Format: | Others |
Language: | English |
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Massachusetts Institute of Technology
2007
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Online Access: | http://hdl.handle.net/1721.1/38670 |