Degradation mechanisms of GaN high electron mobility transistors

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007. === Includes bibliographical references (p. 83-85). === In spite of their extraordinary performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF p...

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Bibliographic Details
Main Author: Joh, Jungwoo
Other Authors: Jesús A. del Alamo.
Format: Others
Language:English
Published: Massachusetts Institute of Technology 2007
Subjects:
Online Access:http://hdl.handle.net/1721.1/38670