Electric field engineering in GaN high electron mobility transistors
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2008. === Includes bibliographical references (leaves 66-70). === In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power ampl...
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| Format: | Others |
| Language: | English |
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Massachusetts Institute of Technology
2008
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| Online Access: | http://hdl.handle.net/1721.1/43062 |