Using statistical metrology to understand pattern-dependent ILD thickness variation in oxide CMP processes

Using statistical metrology to understand pattern-dependent ILD thickness variation in oxide CMP processes

Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997. === Includes bibliographical references (leaves 46-47). === by Rajesh Ramji Divecha. === M.Eng.

Bibliographic Details
Main Author: Divecha, Rajesh Ramji
Other Authors: Duane Boning, James Chung.
Format: Others
Language:English
Published: Massachusetts Institute of Technology 2008
Subjects:
Electrical Engineering and Computer Science
Online Access:http://hdl.handle.net/1721.1/43508

Internet

http://hdl.handle.net/1721.1/43508

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