Flaw-limited transport in germanium-on-silicon photodiodes
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008. === Includes bibliographical references (p. 201-206). === Epitaxial germanium growth on silicon substrates has enabled a new class of photodiodes that can be integrated with traditional...
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Format: | Others |
Language: | English |
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Massachusetts Institute of Technology
2009
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Online Access: | http://hdl.handle.net/1721.1/45751 |