Hole transport in strained SiGe-channel MOSFETs : velocity in scaled devices and mobility under applied mechanical strain
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010. === Cataloged from PDF version of thesis. === Includes bibliographical references (p. 153-167). === Since the 90 nm CMOS technology node, geometric scaling of CMOS has been supplemente...
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| Format: | Others |
| Language: | English |
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Massachusetts Institute of Technology
2010
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| Online Access: | http://hdl.handle.net/1721.1/60144 |