Hole transport in strained SiGe-channel MOSFETs : velocity in scaled devices and mobility under applied mechanical strain

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010. === Cataloged from PDF version of thesis. === Includes bibliographical references (p. 153-167). === Since the 90 nm CMOS technology node, geometric scaling of CMOS has been supplemente...

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Bibliographic Details
Main Author: Gomez, Leonardo, Ph. D. Massachusetts Institute of Technology
Other Authors: Judy L. Hoyt.
Format: Others
Language:English
Published: Massachusetts Institute of Technology 2010
Subjects:
Online Access:http://hdl.handle.net/1721.1/60144