Degradation study of AIGaN/GaN HEMT through electro-thermo-mechanical calculations and thermo-reflectance measurements
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010. === Cataloged from PDF version of thesis. === Includes bibliographical references (p. 75-78). === During the last few years, AIGaN/GaN high electron mobility transistors (HEMTs) have been intensiv...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | English |
| Published: |
Massachusetts Institute of Technology
2011
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/62683 |