Superlattice-source nanowire FET with steep Subthreshold characteristics

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2012. === Cataloged from PDF version of thesis. === Includes bibliographical references (p. 73-78). === The non-scalable room temperature 60 mV/dec subthreshold swing of a conventional MOSFET is a funda...

Full description

Bibliographic Details
Main Author: Zhao, Xin, Ph. D. Massachusetts Institute of Technology
Other Authors: Jesús A. del Alamo.
Format: Others
Language:English
Published: Massachusetts Institute of Technology 2013
Subjects:
Online Access:http://hdl.handle.net/1721.1/82369