Investigation of lateral gated quantum devices in Si/SiGe heterostructures
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Physics, 2013. === Cataloged from PDF version of thesis. === Includes bibliographical references (pages 73-75). === Quantum dots in Si/SiGe have long spin decoherence times, due to the low density of nuclear spins and weak coupling betwe...
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| Format: | Others |
| Language: | English |
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Massachusetts Institute of Technology
2014
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| Online Access: | http://hdl.handle.net/1721.1/83775 |