Strain-balanced silicon-germanium materials for near IR photodetection in silicon-based optical interconnects

Strain-balanced silicon-germanium materials for near IR photodetection in silicon-based optical interconnects

Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998. === Includes bibliographical references (leaves 129-132). === Strain-balanced silicon-germanium superlattices grown on high quality compositionally graded buffers, or virtual substrates. make a c...

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Bibliographic Details
Main Author: Giovane, Laura Marie
Other Authors: Lionel C. Kimerling and Eugene A. Fitzgerald.
Format: Others
Language:English
Published: Massachusetts Institute of Technology 2005
Subjects:
Materials Science and Engineering
Online Access:http://hdl.handle.net/1721.1/9583

Internet

http://hdl.handle.net/1721.1/9583

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