Growth and characterization of high quality relaxed graded silicon germanium layers for integrated photodetectors
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998. === Includes bibliographical references (leaves 137-147). === Silicon germanium layers on silicon substrates (SiGe/Si) are useful for a variety of microelectronics applications. The most successf...
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| Format: | Others |
| Language: | English |
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Massachusetts Institute of Technology
2005
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| Online Access: | http://hdl.handle.net/1721.1/9586 |