A Universal Parameter for Sillicon Anisotropic Etching In Alkaline Solutions

A Universal Parameter for Sillicon Anisotropic Etching In Alkaline Solutions

Bibliographic Details
Main Authors: Cheng, D., Gosálvez, M.A., Shikida, M., Sato, K.
Language:en
Published: IEEE 2006
Online Access:http://dx.doi.org/10.1109/MEMSYS.2006.1627800
http://hdl.handle.net/2237/9537

Internet

http://dx.doi.org/10.1109/MEMSYS.2006.1627800
http://hdl.handle.net/2237/9537

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