A Universal Parameter for Sillicon Anisotropic Etching In Alkaline Solutions
| Main Authors: | , , , |
|---|---|
| Language: | en |
| Published: |
IEEE
2006
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| Online Access: | http://dx.doi.org/10.1109/MEMSYS.2006.1627800 http://hdl.handle.net/2237/9537 |