Development of zinc tin oxide-based transparent thin-film transistors
The focus of this thesis involves development of highly transparent, n-channel, accumulation- mode thin-film transistors employing a zinc tin oxide (ZTO) channel layer. ZTO-based transparent thin-film transistors (TTFTs) show improved device performance compared to ZnO-based TTFTs. An estimated peak...
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| Language: | en_US |
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2012
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| Online Access: | http://hdl.handle.net/1957/30002 |