Fabrication of ultrathin SiC film using grafted poly(methylsilane)
��-SiC is a semiconductor for high temperature devices, which exhibits several outstanding properties such as high thermal stability, good chemical stability and wide band gap. There is a possibility of fabricating a crack-free ultrathin SiC film on silicon wafers by pyrolysis of polymethylsilane (P...
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| Language: | en_US |
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2012
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| Online Access: | http://hdl.handle.net/1957/33083 |