Transport in silicon metal oxide semiconductor quantum dots
Herein, a program of research is detailed related to transport through the Si metal oxide semiconductor (MOS) quantum dots fabricated in a process flow compatible with modern ULSI (ultra large scale integrated circuit). Silicon quantum dots were fabricated by placing split gates within a MOSFET stru...
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| Language: | en_US |
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2012
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| Online Access: | http://hdl.handle.net/1957/33229 |