Transport in silicon metal oxide semiconductor quantum dots
Herein, a program of research is detailed related to transport through the Si metal oxide semiconductor (MOS) quantum dots fabricated in a process flow compatible with modern ULSI (ultra large scale integrated circuit). Silicon quantum dots were fabricated by placing split gates within a MOSFET stru...
Main Author: | Gunther, Allen David |
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Other Authors: | Goodnick, Stephen M. |
Language: | en_US |
Published: |
2012
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Subjects: | |
Online Access: | http://hdl.handle.net/1957/33229 |
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