Ultra low voltage DRAM current sense amplifier with body bias techniques
The major limiting factor of DRAM access time is the low transconductance of the MOSFET's which have only limited current drive capability. The bipolar junction transistor(BJT) has a collector current amplification factor, ��, times base current and is limited mostly by the willingness to suppl...
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| Language: | en_US |
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2012
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| Online Access: | http://hdl.handle.net/1957/33344 |