Design, fabrication and characterization of complementary heterojunction field effect transistors
Complementary delta-doped AlGaAs/GaAs Heterojunction Field Effect Transistor (CHFET) devices and circuits were fabricated using MBE and a 2�� non-planar gate recess process. Several schemes were used in an attempt to improve the performance of the p-channel HFETs. These included delta-doping, carbon...
| Main Author: | |
|---|---|
| Other Authors: | |
| Language: | en_US |
| Published: |
2012
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1957/34635 |