An examination of point defects and atomic diffusion in silicon
The self-interstitial defect is commonly regarded as important in regulating diffusion in silicon. A review of the literature reveals that the scientific bases for invoking the self-interstitial defect are weak, while an alternate defect, the vacancy cluster, has been largely ignored. One argument w...
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| Language: | en_US |
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2012
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| Online Access: | http://hdl.handle.net/1957/34645 |