Two dimensional numerical simulation of a non-isothermal GaAs MESFET

Two dimensional numerical simulation of a non-isothermal GaAs MESFET

The low thermal conductivity of gallium arsenide compared to silicon results in self-heating effects in GaAs MESFETs that limit the electrical performance of such devices for high power applications. To date, analytical thermal models of self heating in GaAs MESFETs are based on the assumption of a...

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Bibliographic Details
Main Author: Lin, Angela A.
Other Authors: Goodnick, Stephen
Language:en_US
Published: 2013
Subjects:
Gallium arsenide semiconductors > Thermal properties
Metal semiconductor field-effect transistors
Heat > Conduction > Mathematical models
Online Access:http://hdl.handle.net/1957/37014

Internet

http://hdl.handle.net/1957/37014

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