A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

A study of deep levels of the emitter region of a heterojunction bipolar transistor is investigated using deep level transient spectroscopy (DLTS), deep level admittance spectroscopy (DLAS), thermally stimulated capacitance (TSCAP), and capacitance-voltage (C-V) profiling. The DX center, with an act...

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Bibliographic Details
Main Author: Huang, Chun-ta
Other Authors: Wager, John F.
Language:en_US
Published: 2013
Subjects:
DX centers (Solid state physics)
Gallium arsenide semiconductors
Junction transistors
Bipolar transistors
Online Access:http://hdl.handle.net/1957/37248

Internet

http://hdl.handle.net/1957/37248

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