Fabrication and characterization of modulation doped field effect transistors for quantum waveguide structures
Split and normal gate A1GaAs /GaAs MODFETs were fabricated along with the ohmic test structures and the Hall bar geometries. The DC characteristics of normal gate transistors were evaluated at room temperature and at 77K and the threshold voltages were extracted from the measurements and compared to...
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| Language: | en_US |
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2013
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| Online Access: | http://hdl.handle.net/1957/38134 |