Instability and temperature-dependence assessment of IGZO TFTs

Instability and temperature-dependence assessment of IGZO TFTs

Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temp...

Full description

Bibliographic Details
Main Author: Hoshino, Ken
Other Authors: Wager, John F.
Language:en_US
Published: 2008
Subjects:
IGZO
TFT
stability
temperature dependence
amorphous oxide semiconductor
Thin film transistors
Metallic oxides
Zinc oxide thin films
Amorphous semiconductors
Indium compounds
Gallium compounds
Online Access:http://hdl.handle.net/1957/9726

Internet

http://hdl.handle.net/1957/9726

Similar Items