Instability and temperature-dependence assessment of IGZO TFTs
Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temp...
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Language: | en_US |
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2008
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Online Access: | http://hdl.handle.net/1957/9726 |