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Next Generation Integrated Behavioral and Physics-based Modeling of Wide Bandgap Semiconductor Devices for Power Electronics

Next Generation Integrated Behavioral and Physics-based Modeling of Wide Bandgap Semiconductor Devices for Power Electronics

Bibliographic Details
Main Author: Hontz, Michael Robert
Language:English
Published: University of Toledo / OhioLINK 2019
Subjects:
Electrical Engineering
Power Electronics
Power Semiconductor Device Modeling
Gallium Nitride Power Devices
Hierarchical Modeling
Semiconductor Physics
TCAD
Online Access:http://rave.ohiolink.edu/etdc/view?acc_num=toledo1556718365514067
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Internet

http://rave.ohiolink.edu/etdc/view?acc_num=toledo1556718365514067

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