Nanophotonic Devices Based on Indium Phosphide Nanopillars Grown Directly on Silicon
<p> III-V optoelectronic device integration in a CMOS post-process compatible manner is important for the intimate integration of silicon-based electronic and photonic integrated circuits. The low temperature, self-catalyzed growth of high crystalline quality Wurtzite-phase InP nanopillars dir...
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| Language: | EN |
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University of California, Berkeley
2018
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| Online Access: | http://pqdtopen.proquest.com/#viewpdf?dispub=10685771 |