Electrical Properties and Band Diagram of InSb-InAs Nanowire Type-III Heterojunctions
The electrical properties of nanowire-based n-InSb-n-InAs heterojunctions grown by chemical beam epitaxy were investigated both theoretically and experimentally. This heterostructure presented a type-III band alignment with the band bendings at 0.12 eV for InAs side and 0.16 − 0.21 eV in InSb. Analy...
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| Language: | en_ca |
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2013
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| Online Access: | http://hdl.handle.net/1807/42727 |