Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP)

博士 === 國立清華大學 === 電機工程研究所 === 75 ===

Bibliographic Details
Main Author: 吳清沂
Other Authors: LIN, MIN-XIONG
Format: Others
Language:zh-TW
Published: 1987
Online Access:http://ndltd.ncl.edu.tw/handle/66558497851898167120