Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP)
博士 === 國立清華大學 === 電機工程研究所 === 75 ===
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Format: | Others |
Language: | zh-TW |
Published: |
1987
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Online Access: | http://ndltd.ncl.edu.tw/handle/66558497851898167120 |