Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP)
博士 === 國立清華大學 === 電機工程研究所 === 75 ===
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ndltd-TW-075NTHU24420512016-02-12T04:10:38Z http://ndltd.ncl.edu.tw/handle/66558497851898167120 Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP) 電漿化學氣相蒸鍍氮氧化矽於III-V族化合物半導體其薄膜與界面特性之研究 吳清沂 博士 國立清華大學 電機工程研究所 75 LIN, MIN-XIONG 林敏雄 1987 學位論文 ; thesis 0 zh-TW |
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zh-TW |
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Others
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博士 === 國立清華大學 === 電機工程研究所 === 75 ===
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author2 |
LIN, MIN-XIONG |
author_facet |
LIN, MIN-XIONG 吳清沂 |
author |
吳清沂 |
spellingShingle |
吳清沂 Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP) |
author_sort |
吳清沂 |
title |
Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP) |
title_short |
Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP) |
title_full |
Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP) |
title_fullStr |
Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP) |
title_full_unstemmed |
Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP) |
title_sort |
study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (pecvd) silicon oxy-nitride (sioxny) on iii-v compound semiconductors (gaas and inp) |
publishDate |
1987 |
url |
http://ndltd.ncl.edu.tw/handle/66558497851898167120 |
work_keys_str_mv |
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