Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP)

博士 === 國立清華大學 === 電機工程研究所 === 75 ===

Bibliographic Details
Main Author: 吳清沂
Other Authors: LIN, MIN-XIONG
Format: Others
Language:zh-TW
Published: 1987
Online Access:http://ndltd.ncl.edu.tw/handle/66558497851898167120
id ndltd-TW-075NTHU2442051
record_format oai_dc
spelling ndltd-TW-075NTHU24420512016-02-12T04:10:38Z http://ndltd.ncl.edu.tw/handle/66558497851898167120 Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP) 電漿化學氣相蒸鍍氮氧化矽於III-V族化合物半導體其薄膜與界面特性之研究 吳清沂 博士 國立清華大學 電機工程研究所 75 LIN, MIN-XIONG 林敏雄 1987 學位論文 ; thesis 0 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 博士 === 國立清華大學 === 電機工程研究所 === 75 ===
author2 LIN, MIN-XIONG
author_facet LIN, MIN-XIONG
吳清沂
author 吳清沂
spellingShingle 吳清沂
Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP)
author_sort 吳清沂
title Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP)
title_short Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP)
title_full Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP)
title_fullStr Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP)
title_full_unstemmed Study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (PECVD) silicon oxy-nitride (SiOxNy) on III-V compound semiconductors (GaAs and InP)
title_sort study of dielectric film and interfacial properties of plasma-enhanced chemical vapour deposited (pecvd) silicon oxy-nitride (sioxny) on iii-v compound semiconductors (gaas and inp)
publishDate 1987
url http://ndltd.ncl.edu.tw/handle/66558497851898167120
work_keys_str_mv AT wúqīngyí studyofdielectricfilmandinterfacialpropertiesofplasmaenhancedchemicalvapourdepositedpecvdsiliconoxynitridesioxnyoniiivcompoundsemiconductorsgaasandinp
AT wúqīngyí diànjiānghuàxuéqìxiāngzhēngdùdànyǎnghuàxìyúiiivzúhuàhéwùbàndǎotǐqíbáomóyǔjièmiàntèxìngzhīyánjiū
_version_ 1718186964885176320