Modeling VLSI MOS devices by solving poission''s Equation: 77K & 300K

博士 === 國立臺灣大學 === 電機工程研究所 === 76 ===

Bibliographic Details
Main Author: 沈載勳
Other Authors: GU, DA-XIONG
Format: Others
Language:zh-TW
Published: 1993
Online Access:http://ndltd.ncl.edu.tw/handle/43577194874494690142