Modeling VLSI MOS devices by solving poission''s Equation: 77K & 300K

博士 === 國立臺灣大學 === 電機工程研究所 === 76 ===

Bibliographic Details
Main Author:	沈載勳
Other Authors:	GU, DA-XIONG
Format:	Others
Language:	zh-TW
Published:	1993
Online Access:	http://ndltd.ncl.edu.tw/handle/43577194874494690142

id	ndltd-TW-076NTU02442098
record_format	oai_dc
spelling	ndltd-TW-076NTU024420982016-07-29T04:12:57Z http://ndltd.ncl.edu.tw/handle/43577194874494690142 Modeling VLSI MOS devices by solving poission''s Equation: 77K & 300K 利用波以松方程式建立超大型積體電路金氧半元件之模型:77K&300K 沈載勳博士國立臺灣大學電機工程研究所 76 GU, DA-XIONG 郭正邦 1993 學位論文 ; thesis 0 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	博士 === 國立臺灣大學 === 電機工程研究所 === 76 ===
author2	GU, DA-XIONG
author_facet	GU, DA-XIONG 沈載勳
author	沈載勳
spellingShingle	沈載勳 Modeling VLSI MOS devices by solving poission''s Equation: 77K & 300K
author_sort	沈載勳
title	Modeling VLSI MOS devices by solving poission''s Equation: 77K & 300K
title_short	Modeling VLSI MOS devices by solving poission''s Equation: 77K & 300K
title_full	Modeling VLSI MOS devices by solving poission''s Equation: 77K & 300K
title_fullStr	Modeling VLSI MOS devices by solving poission''s Equation: 77K & 300K
title_full_unstemmed	Modeling VLSI MOS devices by solving poission''s Equation: 77K & 300K
title_sort	modeling vlsi mos devices by solving poission''s equation: 77k & 300k
publishDate	1993
url	http://ndltd.ncl.edu.tw/handle/43577194874494690142
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Modeling VLSI MOS devices by solving poission''s Equation: 77K & 300K

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