Modeling VLSI MOS devices by solving poission''s Equation: 77K & 300K

Modeling VLSI MOS devices by solving poission''s Equation: 77K & 300K

博士 === 國立臺灣大學 === 電機工程研究所 === 76 ===

Bibliographic Details
Main Author:	沈載勳
Other Authors:	GU, DA-XIONG
Format:	Others
Language:	zh-TW
Published:	1993
Online Access:	http://ndltd.ncl.edu.tw/handle/43577194874494690142

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