A study of Cd diffusion into InSb and evaluation of the devices fabricated by this process

博士 === 國立交通大學 === 光電工程研究所 === 78 === InSb p-n junction formed by Cd diffusion using a two7 temperature7 zone technique. The junction depth and diffusion profile were determined by analyzing the capacitance7 voltage measurements of the MIS diodes fabricated on the etc...

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Bibliographic Details
Main Authors: DU,SHUN-LI, 杜順利
Other Authors: HUANG,KAI-FENG
Format: Others
Language:zh-TW
Published: 1990
Online Access:http://ndltd.ncl.edu.tw/handle/17512308718490561710