A study of Cd diffusion into InSb and evaluation of the devices fabricated by this process

博士 === 國立交通大學 === 光電工程研究所 === 78 === InSb p-n junction formed by Cd diffusion using a two7 temperature7 zone technique. The junction depth and diffusion profile were determined by analyzing the capacitance7 voltage measurements of the MIS diodes fabricated on the etc...

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Main Authors: DU,SHUN-LI, 杜順利
Other Authors: HUANG,KAI-FENG
Format: Others
Language:zh-TW
Published: 1990
Online Access:http://ndltd.ncl.edu.tw/handle/17512308718490561710
id ndltd-TW-078NCTU2124001
record_format oai_dc
spelling ndltd-TW-078NCTU21240012015-10-13T15:21:04Z http://ndltd.ncl.edu.tw/handle/17512308718490561710 A study of Cd diffusion into InSb and evaluation of the devices fabricated by this process 鎘元素在銻化銦內擴散與由其所製成相關元件之研究與分析 DU,SHUN-LI 杜順利 博士 國立交通大學 光電工程研究所 78 InSb p-n junction formed by Cd diffusion using a two7 temperature7 zone technique. The junction depth and diffusion profile were determined by analyzing the capacitance7 voltage measurements of the MIS diodes fabricated on the etched wafer. A modified Boltzmann7 Matano method was used to analyze the diffusion profile, diffusion coefficient as a function of carrier concentration was obtained. InSb junction diodes were then fabricated to study the leakage current and breakown mechanism. It was found that diodes fabricated on low carrier concentration substrates (圖表省略) have a rather large reverse breakdown voltage(14V at 77K). The breakdown voltage decreased as the temperature was decreased, indicating that the mechanism responsible for the breakdown was an avalanche process. Gate controlled diodes were fabricated to study the surface effects. It was concluded that the reverse current was dominated by bulk current, instead of surface current, when the reverse bias voltage was below 3V. InSb MOS field7 effect7 transistors were also fabricated. The MOSFET exhibited high breakdown voltage, which enabled full observation of the current saturation region. Drain current7 voltage characteristics also showed good subthreshold behavior, having an on7 off ratio of. (圖表省略) HUANG,KAI-FENG YANG,SHENG-ZHEN 黃凱風 楊聲震 1990 學位論文 ; thesis 143 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 博士 === 國立交通大學 === 光電工程研究所 === 78 === InSb p-n junction formed by Cd diffusion using a two7 temperature7 zone technique. The junction depth and diffusion profile were determined by analyzing the capacitance7 voltage measurements of the MIS diodes fabricated on the etched wafer. A modified Boltzmann7 Matano method was used to analyze the diffusion profile, diffusion coefficient as a function of carrier concentration was obtained. InSb junction diodes were then fabricated to study the leakage current and breakown mechanism. It was found that diodes fabricated on low carrier concentration substrates (圖表省略) have a rather large reverse breakdown voltage(14V at 77K). The breakdown voltage decreased as the temperature was decreased, indicating that the mechanism responsible for the breakdown was an avalanche process. Gate controlled diodes were fabricated to study the surface effects. It was concluded that the reverse current was dominated by bulk current, instead of surface current, when the reverse bias voltage was below 3V. InSb MOS field7 effect7 transistors were also fabricated. The MOSFET exhibited high breakdown voltage, which enabled full observation of the current saturation region. Drain current7 voltage characteristics also showed good subthreshold behavior, having an on7 off ratio of. (圖表省略)
author2 HUANG,KAI-FENG
author_facet HUANG,KAI-FENG
DU,SHUN-LI
杜順利
author DU,SHUN-LI
杜順利
spellingShingle DU,SHUN-LI
杜順利
A study of Cd diffusion into InSb and evaluation of the devices fabricated by this process
author_sort DU,SHUN-LI
title A study of Cd diffusion into InSb and evaluation of the devices fabricated by this process
title_short A study of Cd diffusion into InSb and evaluation of the devices fabricated by this process
title_full A study of Cd diffusion into InSb and evaluation of the devices fabricated by this process
title_fullStr A study of Cd diffusion into InSb and evaluation of the devices fabricated by this process
title_full_unstemmed A study of Cd diffusion into InSb and evaluation of the devices fabricated by this process
title_sort study of cd diffusion into insb and evaluation of the devices fabricated by this process
publishDate 1990
url http://ndltd.ncl.edu.tw/handle/17512308718490561710
work_keys_str_mv AT dushunli astudyofcddiffusionintoinsbandevaluationofthedevicesfabricatedbythisprocess
AT dùshùnlì astudyofcddiffusionintoinsbandevaluationofthedevicesfabricatedbythisprocess
AT dushunli lìyuánsùzàitíhuàyīnnèikuòsànyǔyóuqísuǒzhìchéngxiāngguānyuánjiànzhīyánjiūyǔfēnxī
AT dùshùnlì lìyuánsùzàitíhuàyīnnèikuòsànyǔyóuqísuǒzhìchéngxiāngguānyuánjiànzhīyánjiūyǔfēnxī
AT dushunli studyofcddiffusionintoinsbandevaluationofthedevicesfabricatedbythisprocess
AT dùshùnlì studyofcddiffusionintoinsbandevaluationofthedevicesfabricatedbythisprocess
_version_ 1717764181726330880